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PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Rev. 01 -- 31 August 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Package NXP PMBT3946VPN SOT666 JEITA NPN/NPN complement PMBT3904VS PNP/PNP complement PMBT3906VS
Type number
1.2 Features
I Double general-purpose switching transistor I Board-space reduction I Ultra small and flat lead SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Symbol VCEO IC TR1 (NPN) hFE TR2 (PNP) hFE DC current gain VCE = -1 V; IC = -10 mA 100 180 300 DC current gain VCE = 1 V; IC = 10 mA 100 180 300 Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max 40 200 Unit V mA
Per transistor; for the PNP transistor with negative polarity
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
1 2 3 1 2
sym019
Simplified outline
6 5 4
Graphic symbol
6 5 4
TR2 TR1
3
3. Ordering information
Table 4. Ordering information Package Name PMBT3946VPN Description plastic surface-mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 5. Marking codes Marking code ZE Type number PMBT3946VPN
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1 (NPN) VCBO TR2 (PNP) VCBO VCEO VEBO IC ICM IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1][2]
Parameter collector-base voltage
Conditions open emitter open emitter open base open collector
Min -
Max 60 -40 40 6 200 200 100 240
Unit V V V V mA mA mA mW
Per transistor; for the PNP transistor with negative polarity
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
2 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot Tj Tamb Tstg
[1] [2]
Parameter total power dissipation junction temperature ambient temperature storage temperature
Conditions Tamb 25 C
[1][2]
Min -55 -65
Max 360 150 +150 +150
Unit mW C C C
Reflow soldering is the only recommended soldering method. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
400 Ptot (mW) 300
006aab604
200
100
0 -75
-25
25
75
125 175 Tamb (C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT666
6. Thermal characteristics
Table 7. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a)
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point thermal resistance from junction to ambient in free air
[1][2]
Conditions in free air
[1][2]
Min -
Typ -
Max 521 100
Unit K/W K/W
Per transistor
-
-
347
K/W
Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
3 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
103 duty cycle = Zth(j-a) (K/W) 102 1 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 0.75
006aab605
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol TR1 (NPN) ICBO IEBO hFE collector-base cut-off VCB = 30 V; IE = 0 A current emitter-base cut-off current DC current gain VEB = 6 V; IC = 0 A VCE = 1 V IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA 60 80 100 60 30 650 180 180 180 105 50 75 120 750 850 300 200 300 850 950 mV mV mV mV 50 50 nA nA Parameter Conditions Min Typ Max Unit
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
4 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol td tr ton ts tf toff Cc Ce fT NF Parameter delay time rise time turn-on time storage time fall time turn-off time collector capacitance VCB = 5 V; IE = ie = 0 A; f = 1 MHz emitter capacitance transition frequency noise figure VEB = 500 mV; IC = ic = 0 A; f = 1 MHz VCE = 20 V; IC = 10 mA; f = 100 MHz VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz Conditions VCC = 3 V; IC = 10 mA; IBon = 1 mA; IBoff = -1 mA Min 300 Typ Max 35 35 70 200 50 250 4 8 5 Unit ns ns ns ns ns ns pF pF MHz dB
TR2 (PNP) ICBO IEBO hFE collector-base cut-off VCB = -30 V; IE = 0 A current emitter-base cut-off current DC current gain VEB = -6 V; IC = 0 A VCE = -1 V IC = -0.1 mA IC = -1 mA IC = -10 mA IC = -50 mA IC = -100 mA VCEsat VBEsat td tr ton ts tf toff Cc collector-emitter saturation voltage base-emitter saturation voltage delay time rise time turn-on time storage time fall time turn-off time collector capacitance VCB = -5 V; IE = ie = 0 A; f = 1 MHz IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA VCC = -3 V; IC = -10 mA; IBon = -1 mA; IBoff = 1 mA 60 80 100 60 30 180 180 180 130 50 -100 -165 -750 -850 300 -250 -400 -850 -950 35 35 70 225 75 300 4.5 mV mV mV mV ns ns ns ns ns ns pF -50 -50 nA nA
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
5 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol Ce fT Parameter emitter capacitance transition frequency Conditions VEB = -500 mV; IC = ic = 0 A; f = 1 MHz VCE = -20 V; IC = -10 mA; f = 100 MHz VCE = -5 V; IC = -100 A; RS = 1 k; f = 10 Hz to 15.7 kHz Min 250 Typ Max 10 Unit pF MHz
NF
noise figure
-
-
4
dB
600 hFE
006aab115
0.20 IB (mA) = 5.0 IC (A) 0.15 4.0 3.0 2.0 1.0
006aab116
4.5 3.5 2.5 1.5
400
(1)
0.10
0.5 200
(2)
0.05
(3)
0 10-1
1
10
102 IC (mA)
103
0.0 0 2 4 6 8 10 VCE (V)
VCE = 1 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 3.
TR1 (NPN): DC current gain as a function of collector current; typical values
Fig 4.
TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
6 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
1.2 VBE (V)
(1)
006aab117
1.3 VBEsat (V) 0.9
(1) (2)
006aab118
0.8
(2)
(3)
0.4
0.5
(3)
0 10-1
1
10
102 IC (mA)
103
0.1 10-1
1
10
102 IC (mA)
103
VCE = 1 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
Fig 5.
TR1 (NPN): Base-emitter voltage as a function of collector current; typical values
1
Fig 6.
TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values
006aab119
VCEsat (V)
10-1
(2)
(1)
(3)
10-2 10-1
1
10
102 IC (mA)
103
IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 7.
TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
7 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
400 hFE 300
(1)
006aab120
-0.3 IC (A) -0.2
006aab121
IB (mA) = -5.0 -4.5 -4.0 -3.5 -3.0
-2.5 -2.0 -1.5
200
(2)
-1.0 -0.1
100
(3)
-0.5
0 -10-1
-1
-10
-102 IC (mA)
-103
0 0
-2
-4
-6
-8 -10 VCE (V)
VCE = -1 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 8.
TR2 (PNP): DC current gain as a function of collector current; typical values
006aab123
Fig 9.
TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values
006aab124
-1.2 VBE (V) -1.0
(1)
-1.2 VBEsat (V) -1.0
(1)
-0.8
(2)
-0.8
(2)
-0.6
(3)
-0.6
(3)
-0.4
-0.4
-0.2 -10-1
-1
-10
-102 IC (mA)
-103
-0.2 -10-1
-1
-10
-102 IC (mA)
-103
VCE = -1 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
IC/IB = 10 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
Fig 10. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values
Fig 11. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
8 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
-1
006aab122
VCEsat (V)
(1)
-10-1
(2) (3)
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 10 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
9 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
8. Test information
VBB VCC
RB oscilloscope VI R1 (probe) 450 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
VI = 5 V; t = 600 s; tp = 10 s; tr = tf 3 ns R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 VBB = -1.9 V; VCC = 3 V Oscilloscope: input impedance Zi = 50
Fig 13. TR1 (NPN): Test circuit for switching times
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
VI = 5 V; t = 600 s; tp = 10 s; tr = tf 3 ns R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 VBB = 1.9 V; VCC = -3 V Oscilloscope: input impedance Zi = 50
Fig 14. TR2 (PNP): Test circuit for switching times
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
10 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
9. Package outline
1.7 1.5 6 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index
0.6 0.5
1 0.5 1 Dimensions in mm
2
3 0.27 0.17 0.18 0.08 04-11-08
Fig 15. Package outline SOT666
10. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 14.
Packing quantity 4000 8000 -315 -115
PMBT3946VPN SOT666
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
11 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
11. Soldering
2.75 2.45 2.1 1.6 solder lands 0.4 (6x) 0.25 (2x) 0.55 (2x) 0.3 (2x) placement area solder paste occupied area 0.325 0.375 (4x) (4x) 1.7 0.45 (4x) 0.5 (4x) 0.6 (2x) 0.65 (2x)
sot666_fr
0.538 2 1.7 1.075
Dimensions in mm
Fig 16. Reflow soldering footprint SOT666
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
12 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
12. Revision history
Table 10. Revision history Release date 20090831 Data sheet status Product data sheet Change notice Supersedes Document ID PMBT3946VPN_1
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
13 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBT3946VPN_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 31 August 2009
14 of 15
NXP Semiconductors
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 August 2009 Document identifier: PMBT3946VPN_1

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